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B-28 01/99 IF140, IF140A N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifiers Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range - 20 V 10 mA 375 mW 3 mW/C - 65C to 200C At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Yos Ciss Crss V(BR)GSS IGSS VGS(OFF) VGS VGS(F) IDSS IF140 Min - 20 - 0.1 - 0.2 -6 -5 1 5 15 Max IF140A Min - 20 - 0.1 - 0.2 -6 - 2.5 5 -6 1 15 Max Unit V nA nA V V V mA Process NJ14AL Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = O, IG = 1 mA VDS = 15V, VGS = OV TA = 150C 4.5 0.05 3 0.6 Typ 4.5 0.05 3 0.6 Typ 4 mS S pF pF VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz Equivalent Short Circuit Input Noise Voltage eN 4 nV/Hz VDS = 12V, VGS = OV f = 10 Hz TO72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
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