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  Datasheet File OCR Text:
 B-28
01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
Low-Noise, High Gain Amplifiers
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
- 20 V 10 mA 375 mW 3 mW/C - 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Yos Ciss Crss V(BR)GSS IGSS VGS(OFF) VGS VGS(F) IDSS
IF140 Min - 20 - 0.1 - 0.2 -6 -5 1 5 15 Max
IF140A Min - 20 - 0.1 - 0.2 -6 - 2.5 5 -6 1 15 Max Unit V nA nA V V V mA
Process NJ14AL Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = O, IG = 1 mA VDS = 15V, VGS = OV TA = 150C
4.5 0.05 3 0.6 Typ
4.5 0.05 3 0.6 Typ 4
mS S pF pF
VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz
Equivalent Short Circuit Input Noise Voltage
eN
4
nV/Hz
VDS = 12V, VGS = OV
f = 10 Hz
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com


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